Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

May 1, 2017

Chochol, Jan, Kamil Postava, Michael Čada, Mathias Vanwolleghem, Martin Mičica, Lukáš Halagačka, Jean-François Lampin, and Jaromír Pištora



In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field.


Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy.